Title : Morphological, optical and porosity properties of nanostructured Cu2ZnSnS4 deposited at room temperature by GLAD (Glancing Angle Deposition) technique
Properties offered by nanomaterials and porous designer lead to use these materials in numerous technological fields such as optoelectronic devices, energy applications, sensors and photonic devices . In addition, several scientific studies prove the potential benefit derived from a porous morphology and designer nanomaterial, especially copper-based multinary sulfide semiconductor . However, obtain porosity in quaternary chalcogenide material such as Cu2ZnSnS4 (CZTS) compound present a big challenge. Because of its interesting intrinsic properties, this kesterite CZTS material was best known as a promising candidate for solar application. In our previous work, we successfully fabricated, for the first time, a porous nano-columnar CZTS thin film . This new designer was fabricated using the GLAD technique at incident angle 85°. As a result, we noted the dependence of the morphology of the thin film on the preferred orientation of the polycrystalline grains . Because is an important step to understand the influence of this architecture offered by this technique, several works studied the relationship between the material type and growth conditions with porosity existing within thin films . In this context, this work presents morphological and optical anisotropy studies of the columnar growth in porous GLAD CZTS thin film by modeling of the slanted structure and studying the porosity parameters of the nano-columns.
Audience take away:
Here is still no general methodology to prepare 1D nanostructures from different materials, which makes the fabrication of hetero-nanostructure very difficult. The success of semiconductor integrated circuits has shown that heterostructures with well-defined crystalline interfaces are essential in developing useful functional devices. It is arguable that the further development of 1D heterostructures (nanowires) is very important for future applications of nanoelectronics.
Despite the recent excitement in heterostructure fabrication, due to the limitations of these methods, the variety of the materials one can access is inherently limited by the growth mechanisms of the preparation process. Therefore, developing a versatile and reliable nanostructure fabrication technique that is suitable for most materials is essential.
In this study I will introduce the GLAD technique that allows to deposit nano-structures with nano-columnar forms. This technique is enough sophisticated to manipulate the diameters, orientations, and positions of the grown nanowires/rods. The controls of growth are critical for future large-scale nanodevices and interconnect applications.