Title : Control of gamma irradiation by the electrophysical properties of two-barrier structures with a silicon-based nanostructural base
The two-barriers structures with a silicon-based nanostructure with high integral sensitivity in molecular concentration. The structure was irradiated with a dose of gamma exposure from 50 krad to 2000 krad. At a low dose of 50 krad, the electrical properties of silicon solar cells improved, and from 100 to 2000 krad, the parameters Isc and η decrease in proportion to the dose of the observer constellation, while Voc decreases, while Voc is reduced slightly. It has been established that the creation of double-barrier structures makes it possible to improve the electrophysical parameters of conventional traditional structures. It is shown that double-barrier structures improve the photovoltaic parameters of conventional detectors by a factor of 3 x 102.