Fakhraddin Pasha Abasov

Title : Control of gamma irradiation by the electrophysical properties of two-barrier structures with a silicon-based nanostructural base

Abstract:

The two-barriers structures with a silicon-based nanostructure with high integral sensitivity in molecular concentration. The structure was irradiated with a dose of gamma exposure from 50 krad to 2000 krad. At a low dose of 50 krad, the electrical properties of silicon solar cells improved, and from 100 to 2000 krad, the parameters I_sc and η decrease in proportion to the dose of the observer constellation, while V_oc decreases, while V_oc is reduced slightly.  It has been established that the creation of double-barrier structures makes it possible to improve the electrophysical parameters of conventional traditional structures. It is shown that double-barrier structures improve the photovoltaic parameters of conventional detectors by a factor of 3 x 10².

Biography:

Fakhraddin Pasha Abasov is a distinguished individual in the field of science, affiliated with the Institute of Radiation Problems under the Ministry of Science and Education in Azerbaijan. His significant contributions and expertise have established him as a respected authority in his field.