Rare-Earth (RE) doped nitride semiconductors thin film nanomaterials are attracting increasing attention as phosphor materials, and are used for optical displays and devices. Sputter deposited AlN is a viable host for luminescent rare-earth (RE) ions due to its transparency over a wide range, including the UV, IR, and entire visible range. GaN doped with RE ions elements is also used for similar applications in visible and IR. The potential suitability and use of luminescence from RE elements towards biomedical applications have shifted the paradigm of RE applications. The present work reports electron penetration depth for electron beam therapy applications and stopping power calculation exploiting the luminescence from thin-film AlN:Thulium and AlN:Holmium thin film nanomaterials. A new method of calculating the electron stopping power of materials used for radiation shielding and protection is introduced based upon the blue and green light emission from AlN:Tm/AlN:Ho bilayers. This method also provides a simple way of testing electron beams for energy loss with time. The current work also reports biomedical applications of RE- Oxide nanoparticles and the use of GaN use a protector from ultraviolet (UV) radiation. The potential use of gadolinium thin films to make a single radiation detector for α-, β-, and γ- radiations detection. Triply ionized Gd+3 is a strong UV emitter. It has been proved already that UV light is emitted from AlN:Gd thin film nanomaterials under photon and electron excitations which can be used to detect β- and γ-ray photons.