Title : Field effect transistors based on two-dimensional materials
Abstract:
Two-dimensional (2D) atomic crystals have attracted intense recent interest in science and engineering due to their rich and tunable electronic, optical, mechanical, chemical, thermal and magnetic properties. These atomically thin materials, with a nearly perfect crystalline structure and dangling-bond free surface, have emerged as a new material platform for fundamental materials science and diverse technology opportunities. Recently, 2D materials beyond graphene mainly transition metal dichalcogenides (TMDCs) (e.g. MoS2, MoSe2, WS2, and WSe2) are finding niche applications for next-generation electronics. Among various electronic devices, the field-effect transistors (FETs) is the very important and a basic element of any electronic circuit/device. MoS2 is a typical example from the layered TMDCs family, is n-type semiconductor with an indirect bandgap of 1.2 eV and can be easily exfoliated by micromechanical exfoliation technique. Here we have presented high-performance field-effect transistors of different layer (single, bi- and multi layer) of MoS2 nanosheets. We have also discussed fabrication of all components of FETs using 2D materials and their performance. Finally, the challenges for this promising material are featured on the basis of its current development.
Audience take-away:
- All those who interested in 2D materials and related work will enjoy. It will also be of great interest to both specialists and general scientists from diverse backgrounds.
- Device fabrication.
- Electronic properties of 2D materials.
- Applications of 2D materials.
- Our study may also useful for other area of science and engineering.
