HYBRID EVENT: You can participate in person at Orlando, USA or Virtually from your home or work.

6th edition of World Nanotechnology Conference

April 24-25, 2023

April 24 -26, 2023 | Orlando, USA
World Nano 2022

Field effect transistors based on two-dimensional materials

Arun Kumar Singh, Speaker at Nanomaterials Conference
Guru Ghasidas Vishwavidyalaya, India
Title : Field effect transistors based on two-dimensional materials


Two-dimensional (2D) atomic crystals have attracted intense recent interest in science and engineering due to their rich and tunable electronic, optical, mechanical, chemical, thermal and magnetic properties. These atomically thin materials, with a nearly perfect crystalline structure and dangling-bond free surface, have emerged as a new material platform for fundamental materials science and diverse technology opportunities. Recently, 2D materials beyond graphene mainly transition metal dichalcogenides (TMDCs) (e.g. MoS2, MoSe2, WS2, and WSe2) are finding niche applications for next-generation electronics. Among various electronic devices, the field-effect transistors (FETs) is the very important and a basic element of any electronic circuit/device. MoS2 is a typical example from the layered TMDCs family, is n-type semiconductor with an indirect bandgap of 1.2 eV and can be easily exfoliated by micromechanical exfoliation technique. Here we have presented high-performance field-effect transistors of different layer (single, bi- and multi layer) of MoS2 nanosheets. We have also discussed fabrication of all components of FETs using 2D materials and their performance. Finally, the challenges for this promising material are featured on the basis of its current development.

Audience take-away:

  • All those who interested in 2D materials and related work will enjoy. It will also be of great interest to both specialists and general scientists from diverse backgrounds.
  • Device fabrication.
  • Electronic properties of 2D materials.
  • Applications of 2D materials.
  • Our study may also useful for other area of science and engineering.


Dr. Arun Kumar Singh is working as Associate Professor at Department of Pure and Applied Physics, Guru Ghasidas Vishwavidyalaya, Bilaspur, India. He received his M.Sc. degree in Physics from Banaras Hindu University, Varanasi, India and received his Ph.D. degree from School of Materials Science and Technology, IIT (BHU), India. After Ph.D., he joined postdoctoral research work at Graphene Research Institute, Sejong University, South Korea. He got India most prestigious research award, “INSPIRE Faculty awards” from DST, India. He has published many papers as a main author and co-author in international journals/conferences in the area of materials science/physics. His research work basically includes the charge transport in organic semiconductors/two dimensional nanomaterials and their electronics device applications. He is life member of many scientific societies and reviewer of International scientific journals.