World Nanotechnology Conference
- April 15-17, 2019
- Dubai, UAE
Dr. M. Ryzhii received the MS degree in quantum electronics from the Moscow Institute of Physics and Technology, Russia, in 1992, and the DEng degree in physical electronics from the Tokyo Institute of Technology, Japan, 2001. From 1993, he has been with the University of Aizu, Aizu-Wakamatsu, Japan, where he is currently an Associate Professor at the Complex System Modeling Laboratory. His research activity includes physics and computer modeling of optoelectronic and terahertz nanostructure devices, and computational modeling of biophysical systems. He is the author or coauthor of more than 120 research articles.
The gapless energy spectrum and high carrier mobility in graphene (G) the flexibility of the energy spectrum in few-layer black phosphorus, i.e., phosphorene (P), the impressive advances in their technology present a new opportunity for developing different new devices on the base the G-P heterostructures.
In this work, we analyse theoretically the lateral carrier transport in these heterostructures, particularly at sufficiently strong electric fields resulting in a substantial carrier heating. We show that the carrier heating can enable effective transfer of light carriers from the G-layer to the P-layer (real-space transfer or RST), where the carrier effective masses are rather large.
We consider the application of the effect of RST in the G-P heterostructures in the field-effect transistors (FETs) with the G-P channel. In particular, we show that due to the RST in such GP-FETs the source-to-drain current can drastically drop with increasing voltage, exhibiting the negative differential conductivity (NDC). The instability of the steady-state source-drain dc current associated with the NDC might be used for generation of electromagnetic oscillations and in logical circuits.
Audience take away:
• The audience attention will be drawn to new type of interesting heterostructures based on graphene
• The heterostructures under consideration can be used for the development of novel effective electronic and optoelectronic devices.