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12th Edition of World Nanotechnology Conference

March 18-20, 2027 | Singapore
March 18-20, 2027 | Singapore

2D Materials for semiconductor Industry

2D Materials for semiconductor Industry

In recent years, 2D materials have emerged as revolutionary components in the semiconductor industry, paving the way for unprecedented advancements in electronic devices. Graphene, a single layer of carbon atoms arranged in a hexagonal lattice, stands out as a prominent example. Its exceptional electrical conductivity, high thermal conductivity, and mechanical strength make it an ideal candidate for enhancing the performance of semiconductor devices. Researchers are exploring innovative ways to integrate graphene into transistors, interconnects, and other crucial elements of electronic circuits. Additionally, other 2D materials, such as transition metal dichalcogenides (TMDs) and black phosphorus, exhibit unique electronic properties that offer novel opportunities for semiconductor applications. These materials enable the development of ultra-thin, flexible, and energy-efficient electronic components, addressing the increasing demand for miniaturization and improved performance in the semiconductor industry.

Beyond their electrical attributes, 2D materials bring transformative advantages to semiconductor manufacturing processes. The thin and flexible nature of these materials allows for easier integration into existing semiconductor fabrication technologies. Engineers can leverage their compatibility with conventional fabrication methods, facilitating the scalable production of 2D-material-based semiconductor devices. Furthermore, the atomically thin nature of 2D materials opens up possibilities for creating transistors and other semiconductor components with unprecedented precision and control at the atomic level. As the semiconductor industry continues to push the boundaries of Moore's Law, 2D materials are poised to play a pivotal role in shaping the next generation of electronic devices, offering a pathway to overcome the limitations of traditional materials and drive innovation in semiconductor technology.

Committee Members
Committee Member - Alexander G Ramm

Alexander G Ramm

Kansas State University, United States
Committee Member - Paulo Cesar De Morais

Paulo Cesar De Morais

Catholic University of Brasilia, Brazil
Committee Member - Thomas J Webster

Thomas J Webster

Brown University, United States
World Nano 2027 Speakers
Karel Havlicek

Karel Havlicek

Technical University of Liberec, Czech Republic
Magda Nechanicka

Magda Nechanicka

Technical University of Liberec, Czech Republic
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